Datasheet Details
| Part number | S2000AFI |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 60.08 KB |
| Description | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| Datasheet | S2000AFI_STMicroelectronics.pdf |
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Overview: ® S2000AFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N).
| Part number | S2000AFI |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 60.08 KB |
| Description | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| Datasheet | S2000AFI_STMicroelectronics.pdf |
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The S2000AFI is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds.
1 3 2 ISOWATT218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM P t ot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (tp < 5 ms) Total Dissipation at T c = 25 C St orage Temperature Max.
Operating Junction Temperature o Value 1500 700 10 8 15 50 -65 to 150 150 Unit V V V A A W o o C C 1/6 December 1999 S2000AFI THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max 2.5 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES I EBO Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = 1500 V V CE = 1500 V V EB = 5 V I C = 100 mA 700 T C = 125 C o Min.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
S2000AF | High voltage NPN Power transistor | ST Microelectronics |
 |
S2000AF | SILICON POWER TRANSISTOR | SavantIC |
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S2000AF1 | SILICON POWER TRANSISTOR | SavantIC |
 |
S2000A | Silicon NPN Transistor | Toshiba |
|
S2000A | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
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