STMicroelectronics SCT20N120H
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.| Part No. | SCT20N120H |
|---|---|
| Datasheet | SCT20N120H Download |
| Manufacturer |  STMicroelectronics |
| Description | 1200V 20A Silicon carbide Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Very tight variation of on-resistance vs. temperature● Very high operating junction temperature capability (TJ = 175 °C)
● Very fast and robust intrinsic body diode
● Low capacitance
APPLICATIONS
● Solar inverters, UPS● Motor drives
● High voltage DC-DC converters
● Switch mode power supplies G(1)
DESCRIPTION
S(2,3) NCHG1DTABS23 The outstanding thermal properties of the SiC material allow designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications. Product status link SCT20N120H Product summary Order code SCT20N120H Marking SCT20N120 Package H2PAK-2 Packing Tape and reel DS13094 - Rev 2 - December 2019 For further information contact your local STMicroelectronics sales office. 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage ID Drain current (continuous) at TC =...
