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SCT20N120 - Silicon carbide Power MOSFET

General Description

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials.

This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.

Key Features

  • HiP247 3 2 1 D(2, TAB).
  • Very low RDS(on) over the entire temperature range.
  • Very high operating junction temperature capability (TJ = 200 °C).
  • Very fast and robust intrinsic body diode.
  • Low capacitance.

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SCT20N120 Datasheet Silicon carbide Power MOSFET 1200 V, 169 mΩ typ., 20 A in an HiP247 package Features HiP247 3 2 1 D(2, TAB) • Very low RDS(on) over the entire temperature range • Very high operating junction temperature capability (TJ = 200 °C) • Very fast and robust intrinsic body diode • Low capacitance Applications • AC-DC converters • DC-DC converters • Motor drives • Solar inverters (string and central) • Uninterruptable power supplies (UPS) G(1) S(3) Description AM01475v1_noZen This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.