SCT20N120 Datasheet | STMicroelectronics

Silicon carbide Power MOSFET 1200 V, 169 mΩ typ., 20 A in an Hi P247 package Features Hi P247 3 2 1 D(2, TAB) - Very low RDS(on) over the entire temperature range - Very high operating junction temperature capability (TJ = 200 °C) - Very fast and robust intrinsic body diode - Low capacitance Applications - AC-DC converters - DC-DC converters - Motor drives - Solar inverters (string and central) - Uninterruptable power supplies (UPS) G(1) S(3) Description AM01475v1_no Zen This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the Si C material allow designers to use an industry-standard outline with significantly improved thermal capability. These Features render the device perfectly suitable for high-efficiency and high power density applications. Product status link SCT20N120 Product summary Order code Marking Package Hi P247 Packing Tube DS10360 - Rev 6 - March 2025 For further information, contact your local STMicroelectronics sales...