STMicroelectronics SCT20N120
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.| Part No. | SCT20N120 |
|---|---|
| Datasheet | SCT20N120 Download |
| Manufacturer |  STMicroelectronics |
| Description | Silicon carbide Power MOSFET |
| Buy | Stock & Price |
FEATURES
HiP247 3 2 1 D(2, TAB)● Very low RDS(on) over the entire temperature range
● Very high operating junction temperature capability (TJ = 200 °C)
● Very fast and robust intrinsic body diode
● Low capacitance
APPLICATIONS
● AC-DC converters● DC-DC converters
● Motor drives
● Solar inverters (string and central)
● Uninterruptable power supplies (UPS) G(1) S(3)
DESCRIPTION
AM01475v1_noZen The outstanding thermal properties of the SiC material allow designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications. Product status link SCT20N120 Product summary Order code SCT20N120 Marking SCT20N120 Package HiP247 Packing Tube DS10360 - Rev 6 - March 2025 For further information, contact your local STMicroelectronics sales office. 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage...
