SCT20N170AG Datasheet | STMicroelectronics

Automotive-grade silicon carbide Power MOSFET 1700 V, 64 mΩ typ., 43 A in an Hi P247 package Features Order code SCT20N170AG VDS 1700 V RDS(on) typ. 64 mΩ ID 43 A Hi P247 3 2 1 - AEC-Q101 rev. C qualified - Very fast and robust intrinsic body diode - Low capacitances - Very high operating junction temperature capability (TJ = 200 °C) D(2, TAB) Applications - Main inverter (electric traction) - DC/DC converter for EV/HEV - On board charger (OBC) G(1) S(3) AM01475v1_no Zen Description This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the Si C material, bined with the device’s housing in the proprietary Hi P247 package, allows designers to use an industry standard outline with significantly improved thermal capability. These Features render the device perfectly suitable for high-efficiency and high power density applications. Product status link SCT20N170AG Product summary Order code Marking Package Hi P247 Packing Tube DS13353...