SCT20N120AG Datasheet | STMicroelectronics

Automotive-grade silicon carbide Power MOSFET 1200 V, 20 A, 189 mΩ (typ., TJ=150 °C), in an Hi P247 package Features Hi P247 3 2 1 D(2, TAB) - AEC-Q101 qualified - Very tight variation of on-resistance vs. temperature - Very high operating temperature capability (TJ = 200 °C) - Very fast and robust intrinsic body diode - Low capacitance Applications - Motor drives - EV chargers - High voltage DC-DC converters - Switch mode power supplies G(1) S(3) AM01475v1_no Zen Description This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the Si C material, bined with the device’s housing in the proprietary Hi P247 package, allows designers to use an industrystandard outline with significantly improved thermal capability. These Features render the device perfectly suitable for high-efficiency and high power density applications. Product status link SCT20N120AG Product summary Order code Marking Package Hi P247 Packing Tube DS12516 - Rev 4 - September 2022 For further information contact your local STMicroelectronics sales...