SCTWA35N65G2V4AG Overview
Key Specifications
Max Operating Temp: 200 °C
Min Operating Temp: -55 °C
Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.
Key Features
- AEC-Q101 qualified
- Very fast and robust intrinsic body diode
- Low capacitances
- Source sensing pin for increased efficiency
- Very high operating junction temperature capability (TJ = 200 °C) Gate(4) Driver source(3) Power source(2) ND1TPS2DS3G4
