SCTWA35N65G2V4AG - Automotive-grade silicon carbide Power MOSFET

Product Overview

STMicroelectronics

Part number	SCTWA35N65G2V4AG
Manufacturer	STMicroelectronics
File Size	193.65 KB
Description	Automotive-grade silicon carbide Power MOSFET
Datasheet	SCTWA35N65G2V4AG Datasheet
Additional preview pages of the SCTWA35N65G2V4AG datasheet.

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

Order code SCTWA35N65G2V4AG VDS 650 V RDS(on) max. 67 mΩ ID 45 A HiP247-4 2 34 1 Drain(1, TAB).
AEC-Q101 qualified.
Very fast and robust intrinsic body diode.
Low capacitances.
Source sensing pin for increased efficiency.
Very high operating junction temperature capability (TJ = 200 °C) Gate(4) Driver source(3) Power source(2) ND1TPS2DS3G4.

📁 Similar Datasheet

Other Datasheets by STMicroelectronics

Published: Feb 18, 2023 |