Datasheet4U Logo Datasheet4U.com

SCTWA35N65G2VAG - Automotive-grade silicon carbide Power MOSFET

📥 Download Datasheet

General Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

The device

Overview

SCTWA35N65G2VAG Datasheet Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ.

Key Features

  • Order code SCTWA35N65G2VAG VDS 650 V RDS(on) typ. 55 mΩ ID 45 A HiP247 long leads.
  • AEC-Q101 qualified.
  • Very fast and robust intrinsic body diode.
  • Low capacitance D(2, TAB) G(1) S(3).

More Datasheets from STMicroelectronics

Part Number Description
SCTWA35N65G2V4AG Automotive-grade silicon carbide Power MOSFET
SCTWA40N120G2AG Automotive-grade silicon carbide Power MOSFET
SCTWA40N120G2V Silicon carbide Power MOSFET
SCTWA40N120G2V-4 Silicon carbide Power MOSFET
SCTWA40N12G24AG Automotive-grade silicon carbide Power MOSFET
SCTWA60N120G2-4 Silicon carbide Power MOSFET
SCTWA60N120G2AG Automotive-grade silicon carbide Power MOSFET
SCTWA60N12G2-4AG Automotive-grade silicon carbide Power MOSFET
SCTWA70N120G2V Silicon carbide Power MOSFET
SCTWA70N120G2V-4 Silicon carbide Power MOSFET