SCTWA35N65G2VAG Overview
Key Specifications
Max Operating Temp: 200 °C
Min Operating Temp: -55 °C
Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.
Key Features
- AEC-Q101 qualified
- Very fast and robust intrinsic body diode
- Low capacitance D(2, TAB) G(1) S(3)
