Datasheet Summary
Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 long leads package
Features
Order code SCTWA35N65G2VAG
VDS 650 V
RDS(on) typ. 55 mΩ
ID 45 A
HiP247 long leads
- AEC-Q101 qualified
- Very fast and robust intrinsic body diode
- Low capacitance
D(2, TAB) G(1)
S(3)
Applications
- Switching mode power supply
- EV chargers
- DC-DC converters
AM01475v1_noZen
Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device Features remarkably low on-resistance per unit area and very good switching performance. The variation...