STMicroelectronics SCTWA35N65G2VAG
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.| Part No. | SCTWA35N65G2VAG |
|---|---|
| Datasheet | SCTWA35N65G2VAG Download |
| Manufacturer |  STMicroelectronics |
| Description | Automotive-grade silicon carbide Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code SCTWA35N65G2VAG VDS 650 V RDS(on) typ. 55 mΩ ID 45 A HiP247 long leads● AEC-Q101 qualified
● Very fast and robust intrinsic body diode
● Low capacitance D(2, TAB) G(1) S(3)
APPLICATIONS
● Switching mode power supply● EV chargers
● DC-DC converters AM01475v1_noZen
DESCRIPTION
The variation of switching loss is almost independent of junction temperature. Product status link SCTWA35N65G2VAG Product summary Order code SCTWA35N65G2VAG Marking 35N65G2VAG Package HiP247 long leads Packing Tube DS13412 - Rev 1 - August 2020 For further information contact your local STMicroelectronics sales office. SCTWA35N65G2VAG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage Gate-source voltage VGS Gate-source voltage (recommended operating range) Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C Tstg Storage temperature range TJ Operating junction temperature range 1.
