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SCTWA60N120G2-4 - Silicon carbide Power MOSFET

STMicroelectronics

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SCTWA60N120G2-4 silicon carbide power mosfet by STMicroelectronics - Datasheet Preview

Datasheet Details

Part number	SCTWA60N120G2-4
Manufacturer	STMicroelectronics
File Size	192.70 KB
Description	Silicon carbide Power MOSFET
Datasheet	SCTWA60N120G2-4 Datasheet

General Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

The device

Overview

SCTWA60N120G2-4 Datasheet Silicon carbide Power MOSFET 1200 V, 35 mΩ typ.

Key Features

Order code VDS RDS(on) max. ID SCTWA60N120G2-4 1200 V 52 mΩ 60 A.
Very fast and robust intrinsic body diode.
Extremely low gate charge and input capacitance.
Very high operating junction temperature capability (TJ = 200 °C).
Source sensing pin for increased efficiency.

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