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SCTWA60N120G2-4

Manufacturer: STMicroelectronics

SCTWA60N120G2-4 datasheet preview

Datasheet Details

Part number	SCTWA60N120G2-4
Datasheet	SCTWA60N120G2-4-STMicroelectronics.pdf
File Size	192.70 KB
Manufacturer	STMicroelectronics
Description	Silicon carbide Power MOSFET

SCTWA60N120G2-4 Overview

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

SCTWA60N120G2-4 Key Features

Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Very high operating junction temperature capability (TJ = 200 °C)
Source sensing pin for increased efficiency

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SCTWA60N120G2-4 Distributor