Datasheet Summary
Silicon carbide Power MOSFET 1200 V, 35 mΩ typ., 60 A in an HiP247-4 package
HiP247-4
2 34 1
Drain(1, TAB)
Gate(4) Driver source(3)
Power source(2)
ND1TPS2DS3G4
Features
Order code
RDS(on) max.
1200 V
52 mΩ
60 A
- Very fast and robust intrinsic body diode
- Extremely low gate charge and input capacitance
- Very high operating junction temperature capability (TJ = 200 °C)
- Source sensing pin for increased efficiency
Applications
- Switching mode power supply
- DC-DC converters
- Industrial motor control
Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation...