STMicroelectronics SCTWA60N120G2AG
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.| Part No. | SCTWA60N120G2AG |
|---|---|
| Datasheet | SCTWA60N120G2AG Download |
| Manufacturer |  STMicroelectronics |
| Description | Automotive-grade silicon carbide Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code SCTWA60N120G2AG VDS 1200 V RDS(on) max. 58 mΩ ID 52 A HiP247 long leads D(2, TAB) G(1) S(3) AM01475v1_noZen● AEC-Q101 qualified
● Very fast and robust intrinsic body diode
● Extremely low gate charge and input capacitance
● Very high operating junction temperature capability (TJ = 200 °C)
APPLICATIONS
● Main inverter (electric traction)● DC/DC converter for EV/HEV
● On board charger (OBC)
DESCRIPTION
The variation of switching loss is almost independent of junction temperature. Product status link SCTWA60N120G2AG Product summary Order code SCTWA60N120G2AG Marking SCT60N120G2AG Package HiP247 long leads Packing Tube DS13600 - Rev 1 - December 2020 For further information contact your local STMicroelectronics sales office. SCTWA60N120G2AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage Gate-source voltage VGS Gate-source voltage (recommended operational values) Drain current (continuous) at TC = 25...
