SCTWA60N120G2AG - Automotive-grade silicon carbide Power MOSFET

STMicroelectronics

Datasheet Details

Part number	SCTWA60N120G2AG
Manufacturer	STMicroelectronics
File Size	237.75 KB
Description	Automotive-grade silicon carbide Power MOSFET
Datasheet	SCTWA60N120G2AG Datasheet

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

The device

SCTWA60N120G2AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ.

Order code SCTWA60N120G2AG VDS 1200 V RDS(on) max. 58 mΩ ID 52 A HiP247 long leads D(2, TAB) G(1) S(3) AM01475v1_noZen.
AEC-Q101 qualified.
Very fast and robust intrinsic body diode.
Extremely low gate charge and input capacitance.
Very high operating junction temperature capability (TJ = 200 °C).

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