Datasheet Summary
Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 52 A in an HiP247 long leads package
Features
Order code SCTWA60N120G2AG
VDS 1200 V
RDS(on) max. 58 mΩ
ID 52 A
HiP247 long leads
D(2, TAB)
G(1)
S(3)
AM01475v1_noZen
- AEC-Q101 qualified
- Very fast and robust intrinsic body diode
- Extremely low gate charge and input capacitance
- Very high operating junction temperature capability (TJ = 200 °C)
Applications
- Main inverter (electric traction)
- DC/DC converter for EV/HEV
- On board charger (OBC)
Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology....