STMicroelectronics SD4010
The SD4010 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors. The SD4010 is intended for use in linear applications up to 1GHz, including UHF television transmitters, transposers and cellular base stations.| Part No. | SD4010 |
|---|---|
| Datasheet | SD4010 Download |
| Manufacturer |  STMicroelectronics |
| Description | RF & MICROWAVE TRANSISTORS UHF TV LINEAR APPLICATIONS |
| Buy | Stock & Price |
APPLICATIONS
. . . . . . 470-860 MHz 26.5 VOLTS GOLD METALLIZATION P OUT = 20.0W MIN. WITH 9.5 dB GAIN INTERNAL INPUT MATCHING DIFFUSED EMITTER BALLAST RESISTORS .400 x .425 4LFL (M119) hermetically sealed ORDER CODE SD4010 BRANDING SUTV200 PIN CONNECTIONDESCRIPTION
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter VCBO VCES VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current (Maximum) Power Dissipation Junction Temperature Storage Temperature 60.0 60.0 4.0 11.0 88.8 +200 − 65 to +150 V V V A W °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance 1.9 °C/W 1/5 November 1992 SD4010ELECTRICAL SPECIFICATIONS
(T case = 25 ° C) STATIC Symbol Test Conditions Value Min . Typ. Max. Unit BVEBO BVCES BVCEO ICEO hFE Tested Per Side IE = 10mA IC = 50mA IC = 50mA VCE = 26.5V VCE = 5V IC = 0mA VBE = 0V IB = 0mA IE = 0mA IC = 3A 3.0 4.0 — — — 5 80 V V V mA — 60.0 85.0 28.0 30.0 — 25 — 50 DYNAMIC Symbol Test Conditions Value Min.
