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SD4017 Datasheet PDF

STMicroelectronics SD4017

The SD4017 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity class AB operation for cellular base station applications.
Part No. SD4017
Datasheet SD4017 Download
Manufacturer
STMicroelectronics
Description RF & MICROWAVE TRANSISTORS 806-960 MHz CELLULAR BASE STATIONS
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SD4017 datasheet page 1 preview

DESCRIPTION

ABSOLUTE MAXIMUM RATINGS

(T case = 25 ° C) Symbol Parameter 1. Collector 2. Base 3. Emitter Value Unit VCBO VCEO VEBO PDISS IC TJ T STG Collector-Base Voltage Collector-Emitter Voltage Collector-Supply Voltage Power Dissipation Device Current Junction Temperature Storage Temperature 48 25 3.5 88 7.5 200 − 65 to +150 V V V W A °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance 2.0 °C/W July 19, 1994 1/7 SD4017

ELECTRICAL SPECIFICATIONS

(T case STATIC Symbol Test Conditions Value Min. Typ. Max. Unit = 25° C) BVCBO BVEBO BVCEO BVCER ICBO hFE IC = 100 mA IE = 10 mA IC = 40 mA IC = 40 mA VCE = 24 V VCE = 20 V IC = 2 A RBE = 150 Ω 48 3.5 25 30 10 15 55 5 28 40 — 40 — — — — — 100 V V V V mA — DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit POUT ηc PG COB IMD3 VSWR1 VSWR2 OVD f = 860 MHz f = 860 MHz f = 860 MHz VCB = 25 V POUT = 30 WPEP VSWR = 20:1 VSWR = 10:1 VSWR = 5:1 PIN = PIN (norm) +3dB PIN(norm) = +5dB PIN(norm) = +3dB VCE = 25 V VCE = 25 V VCE = 25 V fo = 1 MHz f1 = 860.0 MHz ICQ = 60 mA ICQ = 60 mA ICQ = 60 mA f2 = 860.1 MHz 30 — 7.5 — — — 55 9 42 −35 — — — — — W % dB pf dBc Typ.
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