STMicroelectronics SD4017
The SD4017 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity class AB operation for cellular base station applications.DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
(T case = 25 ° C) Symbol Parameter 1. Collector 2. Base 3. Emitter Value Unit VCBO VCEO VEBO PDISS IC TJ T STG Collector-Base Voltage Collector-Emitter Voltage Collector-Supply Voltage Power Dissipation Device Current Junction Temperature Storage Temperature 48 25 3.5 88 7.5 200 − 65 to +150 V V V W A °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance 2.0 °C/W July 19, 1994 1/7 SD4017ELECTRICAL SPECIFICATIONS
(T case STATIC Symbol Test Conditions Value Min. Typ. Max. Unit = 25° C) BVCBO BVEBO BVCEO BVCER ICBO hFE IC = 100 mA IE = 10 mA IC = 40 mA IC = 40 mA VCE = 24 V VCE = 20 V IC = 2 A RBE = 150 Ω 48 3.5 25 30 10 15 55 5 28 40 — 40 — — — — — 100 V V V V mA — DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit POUT ηc PG COB IMD3 VSWR1 VSWR2 OVD f = 860 MHz f = 860 MHz f = 860 MHz VCB = 25 V POUT = 30 WPEP VSWR = 20:1 VSWR = 10:1 VSWR = 5:1 PIN = PIN (norm) +3dB PIN(norm) = +5dB PIN(norm) = +3dB VCE = 25 V VCE = 25 V VCE = 25 V fo = 1 MHz f1 = 860.0 MHz ICQ = 60 mA ICQ = 60 mA ICQ = 60 mA f2 = 860.1 MHz 30 — 7.5 — — — 55 9 42 −35 — — — — — W % dB pf dBc Typ.