STMicroelectronics SD4013
The SD4013 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for superior ruggedness. The SD4013 can withstand 20:1 VSWR under rated operating conditions and is internally input matched to optimize power gain and efficiency over the band.| Part No. | SD4013 |
|---|---|
| Datasheet | SD4013 Download |
| Manufacturer |  STMicroelectronics |
| Description | RF & MICROWAVE TRANSISTORS UHF COMMUNICATIONS APPLICATIONS |
| Buy | Stock & Price |
APPLICATIONS
. . . . . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION INTERNAL INPUT MATCHING METAL/CERAMIC PACKAGE EMITTER BALLASTED 20:1 VSWR CAPABILITY P OUT = 25 W MIN. WITH 9 dB GAIN .500 6LFL (M111) epoxy sealed ORDER CODE SD4013 BRANDING SUMIL25 PIN CONNECTIONDESCRIPTION
ABSOLUTE MAXIMUM RATINGS
(T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Emitter VCBO VCEO VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 60 30 3.5 3.0 70 +200 − 65 to +150 V V V A W °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance 2.5 °C/W 1/5 November 1992 SD4013ELECTRICAL SPECIFICATIONS
(T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVEBO BVCES I CBO hFE IC = 50mA IE = 5mA IC = 50mA VCB = 30V VCE = 5V IE = 0mA IC = 0mA VBE = 0mA IE = 0mA IC = 500mA 60 3.5 60 — 10 — — — — 30 — — — 3.0 120 V V V mA — DYNAMIC Symbol Test Conditions Value Min.
