SGSP361 Datasheet | STMicroelectronics

SGSP361 SGSP362 - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE SGSP361 SGSP362 Voss 100 V 80 V Ros(on) 0.150 0.1 0 10 18 A 22 A - HIGH SPEED SWITCHING APPLICATIONS - 80 - 100 VOLTS - FOR UPS APPLICATIONS - ULTRA FAST SWITCHING - RATED FOR UNCLAMPED INDUCTIVE SWITCHING (ENERGY TEST) - - EASY DRIVE FOR REDUCED SIZE AND COST INDUSTRIAL APPLICATIONS: - UNINTERRUPTIBLE POWER SUPPLIES - MOTOR CONTROLS - channel enhancement mode POWER MOS field effect transistor. Easy drive and very fast switching times make this POWER MOS transistor ideal for high speed switching applications. Typical applications include UPS, battery chargers, printer hammer drivers, solenoid drivers and motor control. , INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS VOS VOGR V GS 10 10 ION! (e) Ptot Tstg Tj Drain-source voltage (VGs=O) Drain-gate voltage (RGS = 20 KO) Gate-source voltage Drain current (cont.) at Tc =25°C Drain current (cont.) at Tc = 100°C Drain current (pulsed) Total dissipation at Tc <25°C Derating factor Storage temperature Max. operating junction temperature (e) Pulse width limited by safe operating area - Introduced in 1988 week 44 June 1988 SGSP362 ±20 W/o C - 65 to...