SGSP367 Datasheet | STMicroelectronics

.r..=,-L=. S~DG©OOS@~-O1J~H©l OJOOM@[St(!O]ON©~ SGSP363 SGSP367 - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE SGSP363 SGSP367 Voss 250 V 200 V Ros(on) 0.450 0.330 10 10 A 12 A - HIGH SPEED SWITCHING APPLICATIONS - TELEMUNICATION APPLICATIONS - RATED FOR UNCLAMPED INDUCTIVE SWITCHING (ENERGY TEST) - - ULTRA FAST SWITCHING - EASY DRIVE FOR REDUCED COST AND SIZE INDUSTRIAL APPLICATIONS: - ROBOTICS - SWITCHING POWER SUPPLIES - channel enhancement mode POWER MOS field effect transistor. Easy drive and very fast switching times make this POWER MOS transistor ideal for high speed switching applications. Typical applications include robotics, uninterruptible power supplies, motor control and solenoid drives. TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Vos VOGR VGS 10 10 10M (e) Ptot Tstg Tj Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20 KO) Gate-source voltage Drain current (cont.) at Tc = 25°C Drain current (cont.) at Tc= 100°C Drain current (pulsed) Total dissipation at Tc <25°C Derating factor Storage temperature Max. operating junction temperature (e) Pulse width limited by safe operating area - Introduced in 1989 week 1 June 1988 SGSP363 ±20 W/o C -65 to...