STMicroelectronics SGSP364
N-CHANNEL POWER MOS TRANSISTORS
- Max Operating Temp : 150°C
Source:
Octopart
APPLICATIONS
● HIGH VOLTAGE - FOR ELECTRONIC LAMP BALLAST● ULTRA FAST SWITCHING
● EASY DRIVE - REDUCED COST AND SIZE INDUSTRIAL
APPLICATIONS
:● ELECTRONIC LAMP BALLAST
● DC SWITCH N - channel enhancement mode POWER MOS field effect transistors. Easy drive and very fast switching times make these POWER MOS transistors ideal for high speed switching applications.
APPLICATIONS
include DC switch, constant current source, ultrasonic equipment and electronic ballast for fluorescent lamps. , TO-220 INTERNAL SCHEMATIC DIAGRAM 5ABSOLUTE MAXIMUM RATINGS
VOS VOGR VGS 10 10 10M (e) 10LM (e) Ptot T stg Tj Drain-source voltage (VGS =0) Drain-gate voltage (RGS =20 KU) Gate-source voltage Drain current (cont.) at Tc =25°C Drain current (cont.) at Tc = 100°C Drain current (pulsed) Drain inductive current, clamped Total dissipation at Tc <25°C Derating factor Storage temperature Max. operating junction temperature (e) Pulse width limited by safe operating area SGSP364 SGSP369 450 500 V 450 500 V ±20 V...