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STB21NM60N-1 - N-CHANNEL MOSFET

Download the STB21NM60N-1 datasheet PDF. This datasheet also covers the STB21NM60N variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

ucThis series of devices implements the second dgeneration of MDmesh™ technology.

gate charge.

Key Features

  • Type VDSS (@Tjmax) RDS(on) max ID STB21NM60N )STB21NM60N-1 t(sSTF21NM60N cSTP21NM60N uSTW21NM60N 650 V 650 V 650 V 650 V 650 V < 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω 17 A 17 A 17 A(1) 17 A 17 A rod1. Limited by maximum temperature allowed P.
  • 100% avalanche tested te.
  • Low input capacitance and gate charge le.
  • Low gate input resistance bso.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STB21NM60N_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
STB21NM60ND N-Channel MOSFET INCHANGE
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STB21N65M5 N-Channel MOSFET INCHANGE
STB210NF02 N-CHANNEL POWER MOSFET ST Microelectronics
STB210NF02-1 N-CHANNEL POWER MOSFET ST Microelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STB21NM60N N-CHANNEL MOSFET
STB21NM60ND N-channel MOSFET
STB21NM50N N-CHANNEL MOSFET
STB21N65M5 N-CHANNEL MOSFET
STB21N90K5 N-CHANNEL MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STP21NM60N-F21NM60N-STW21NM60N STB21NM60N-STB21NM60N-1 N-channel 600 V - 0.17 Ω - 17 A TO-220 - TO-220FP - D2PAK I2PAK - TO-247 second generation MDmesh™ Power MOSFET Features Type VDSS (@Tjmax) RDS(on) max ID STB21NM60N )STB21NM60N-1 t(sSTF21NM60N cSTP21NM60N uSTW21NM60N 650 V 650 V 650 V 650 V 650 V < 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω 17 A 17 A 17 A(1) 17 A 17 A rod1. Limited by maximum temperature allowed P■ 100% avalanche tested te■ Low input capacitance and gate charge le■ Low gate input resistance bsoApplication - O■ Switching applications t(s)Description ucThis series of devices implements the second dgeneration of MDmesh™ technology.