STB21NM60N
STB21NM60N is N-CHANNEL MOSFET manufactured by STMicroelectronics.
STP21NM60N-F21NM60N-STW21NM60N STB21NM60N-STB21NM60N-1
N-channel 600 V
- 0.17 Ω
- 17 A TO-220
- TO-220FP
- D2PAK I2PAK
- TO-247 second generation MDmesh™ Power MOSFET
Features
Type
VDSS (@Tjmax)
RDS(on) max
)STB21NM60N-1 t(s STF21NM60N c STP21NM60N u STW21NM60N
650 V 650 V 650 V 650 V 650 V
< 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω
17 A 17 A 17 A(1) 17 A 17 A rod1. Limited by maximum temperature allowed
P- 100% avalanche tested te- Low input capacitance and gate charge le- Low gate input resistance bso Application
- O- Switching applications t(s)Description uc This series of devices implements the second dgeneration of MDmesh™ technology. This rorevolutionary Power MOSFET associates a new Pvertical structure to the pany’s strip layout to teyield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most
Obsoledemanding high efficiency converters.
3 2 1
TO-220
3 2 1
TO-220FP
3 1
D2PAK
I2PAK
3 2 1
TO-247
Figure 1. Internal schematic diagram
Table 1. Device summary
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