STB24N60DM2 Overview
These FDmesh II Plus™ low Qg Power MOSFETs with intrinsic fast-recovery body diode are produced using a new generation of MDmesh™ S(3) AM01476v1 technology: These revolutionary Power MOSFETs associate a vertical structure to the pany's strip layout to yield one of the world's lowest.
STB24N60DM2 Key Features
- Extremely low gate charge and input capacitance
- Lower RDS(on) x area vs previous generation
- Low gate input resistance
- 100% avalanche tested
- Zener-protected
- Extremely high dv/dt and avalanche