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STB4NC60-1 Datasheet PDF

STMicroelectronics STB4NC60-1

The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.
Part No. STB4NC60-1
Datasheet STB4NC60-1 Download
Manufacturer
STMicroelectronics
Description N-CHANNEL MOSFET
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STB4NC60-1 datasheet page 1 preview

DESCRIPTION

APPLICATIONS

s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVERS I PAK (Tabless TO-220) 2 12 3 INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt(1) VISO Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature 4.2 2.6 16.8 100 0.8 3.5 –65 to 150 (*)Limited only by maximum Temperature allowed Value STP(B)4NC60(-1) 600 600 ±30 4.2(*) 2.6(*) 16.8(*) 35 0.28 3.5 2500 STP4NC60FP Unit V V V A A A W W/°C V/ns V °C (●)Pulse width limited by safe operating area (1)ISD ≤4.2A, di/dt ≤ 300A/µs, VDD ≤ V(BR)DSS, Tj ≤ T JMAX.
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