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N-CHANNEL 600V - 1.8Ω - 4.2A D2PAK PowerMesh™II MOSFET
TYPE STB4NC60
www.DataSheet4U.com s TYPICAL
s s s s
STB4NC60
VDSS 600V
RDS(on) < 2.2Ω
ID 4.2A
RDS(on) = 1.8Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
3 1
DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.