Datasheet4U.com

STB4NC60 Datasheet PDF

STMicroelectronics STB4NC60

The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.
Part No. STB4NC60
Datasheet STB4NC60 Download
Manufacturer
STMicroelectronics
Description N-CHANNEL MOSFET
Buy Stock & Price
STB4NC60 datasheet page 1 preview

DESCRIPTION

APPLICATIONS

HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVERS s D2PAK INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt(1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 600 600 ±30 4.2 2.6 16.8 100 0.8 3.5 –65 to 150 Unit V V V A A A W W/°C V/ns °C (●)Pulse width limited by safe operating area (1)ISD ≤4.2A, di/dt ≤300A/µs, VDD ≤ V (BR)DSS, Tj ≤ T JMAX. October 2001 1/9 okDatasheet.com - Free Datasheet Search Engine STB4NC60 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junct...
STB4NC60 page 2 preview STB4NC60 page 3 preview