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STB8N90K5 Datasheet N-channel Power MOSFET

Manufacturer: STMicroelectronics

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General Description

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.

The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Order code STB8N90K5 Table 1: Device summary Marking Package 8N90K5 D2PAK Packing Tape and reel November 2016 DocID030104 Rev 1 This is information on a product in full production.

Overview

STB8N90K5 N-channel 900 V, 0.60 Ω typ., 8 A MDmesh™ K5 Power MOSFET in a D2PAK package Datasheet - production data TAB 2 3 1 D²PAK Figure 1: Internal schematic.

Key Features

  • Order code STB8N90K5 VDS 900 V RDS(on) max. 0.68 Ω ID 8A.
  • Industry’s lowest RDS(on) x area.
  • Industry’s best FoM (figure of merit).
  • Ultra-low gate charge.
  • 100% avalanche tested.
  • Zener-protected.

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