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STB8N90K5 - N-channel Power MOSFET

Datasheet Summary

Description

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.

The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Features

  • Order code STB8N90K5 VDS 900 V RDS(on) max. 0.68 Ω ID 8A.
  • Industry’s lowest RDS(on) x area.
  • Industry’s best FoM (figure of merit).
  • Ultra-low gate charge.
  • 100% avalanche tested.
  • Zener-protected.

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Datasheet preview – STB8N90K5

Datasheet Details

Part number STB8N90K5
Manufacturer STMicroelectronics
File Size 721.26 KB
Description N-channel Power MOSFET
Datasheet download datasheet STB8N90K5 Datasheet
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Full PDF Text Transcription

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STB8N90K5 N-channel 900 V, 0.60 Ω typ., 8 A MDmesh™ K5 Power MOSFET in a D2PAK package Datasheet - production data TAB 2 3 1 D²PAK Figure 1: Internal schematic diagram Features Order code STB8N90K5 VDS 900 V RDS(on) max. 0.68 Ω ID 8A  Industry’s lowest RDS(on) x area  Industry’s best FoM (figure of merit)  Ultra-low gate charge  100% avalanche tested  Zener-protected Applications  Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
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