STB8NA50 Datasheet | STMicroelectronics

- CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STB8NA50 n n n n n n n n V DSS 500 V R DS(on ) < 0.85 Ω ID 8 A n TYPICAL RDS(on) = 0.7 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100o C LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD THROUGH-HOLE I2PAK (TO-262) POWER PACKAGE IN TUBE (SUFFIX ”-1”) SURFACE-MOUNTING D2PACK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX ”T4”) 3 12 I2PAK TO-262 D2PAK TO-263 APPLICATIONS n HIGH CURRENT, HIGH SPEED SWITCHING n SWITCH MODE POWER SUPPLIES (SMPS) n DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol V DS V DGR V GS ID ID I DM ( - ) P tot T s tg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) T otal Dissipation at T c = 25 C Derating Fact or Storage Temperature Max. O perating Junction Temperature o o Valu e 500 500 ± 30 8 5.3 32 125 1 -65 to 150 150 Unit V V V A A A W W/ o C o o (- ) Pulse width limited by safe operating area October 1995 1/10 .Data Sheet.in THERMAL DATA R thj -ca se R thj- amb R thc-sin k Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead T emperature For Soldering Purpose Max Max Typ 1 62.5 0.5 300 o o C/W C/W o C/W o C AVALANCHE CHARACTERISTICS Symbo l I AR E AS E AR I AR Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ < 1%) Single Pulse Avalanche Energy (starting Tj = 25 o C, ID = IAR , V DD = 50 V) Repetitive Avalanche Energy (pulse width limited by T j max, δ < 1%) Avalanche Current, Repetitive or Not-Repetitive o (T c = 100 C, pulse width limited by T j max, δ < 1%) Max Valu e 8 350 11...