STB8NC50-1 Datasheet | STMicroelectronics

N The Power MESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron- area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVES s I²PAK INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt (1) VISO Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature - 65 to 150 150 (1)ISD ≤8A, di/dt ≤100A/µs, V DD ≤ V(BR)DSS, Tj ≤ TJMAX. Value STP(B)8NC50(-1) STP8NC50FP 500 500 ±30 8 5.4 32 135 1.075 3 2000 8(- ) 5.4(- ) 32(- ) 40 0.32 Unit V V V A A A W W/°C V/ns V °C °C (- )Pulse width limited by safe operating area (- ) Limited only by maximum temperature allowed December 2000 1/10 .Data Sheet.in STP8NC50/FP/STB8NC50-1 THERMAL DATA TO-220/I2PAK Rthj-case Rthj-amb Rthc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 0.93 62.5 0.5 300 TO-220FP 3.12 °C/W °C/W °C/W °C AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value 8 600 Unit A m J ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body...