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STB8NC50-1 - N-CHANNEL MOSFET

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Description

The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™.

area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.

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Datasheet preview – STB8NC50-1

Datasheet Details

Part number STB8NC50-1
Manufacturer STMicroelectronics
File Size 257.32 KB
Description N-CHANNEL MOSFET
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N-CHANNEL 500V - 0.7 Ω - 8A TO-220/TO-220FP/I2PAK PowerMesh™II MOSFET TYPE STP(B)8NC50(-1) STP8NC50FP s s s s s STP8NC50 - STP8NC50FP STB8NC50-1 VDSS 500 V 500 V RDS(on) < 0.85 Ω < 0.85 Ω ID 8A 8A 3 1 2 TYPICAL RDS(on) = 0.7 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED TO-220 TO-220FP DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.
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