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STD105N10F7AG - N-CHANNEL POWER MOSFET

General Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Key Features

  • Order code VDS RDS(on) max. ID PTOT STD105N10F7AG 100 V 8 mΩ 80 A 120 W Figure 1: Internal schematic diagram D(2, TAB) G(1) S(3).
  • Designed for automotive.

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STD105N10F7AG Automotive-grade N-channel 100 V, 6.8 mΩ typ., 80 A, STripFET™ F7 Power MOSFET in a DPAK package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STD105N10F7AG 100 V 8 mΩ 80 A 120 W Figure 1: Internal schematic diagram D(2, TAB) G(1) S(3)  Designed for automotive applications and AEC-Q101 qualified  Among the lowest RDS(on) on the market  Excellent FoM (figure of merit)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness Applications  Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.