STMicroelectronics STD16N60M2
This device is an N-channel Power MOSFET developed using MDmesh M2 technology.| Part No. | STD16N60M2 |
|---|---|
| Datasheet | STD16N60M2 Download |
| Manufacturer |  STMicroelectronics |
| Description | 600V 12A N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS RDS(on) max. ID STD16N60M2 600 V 320 mΩ 12 A● Extremely low gate charge
● Excellent output capacitance (COSS) profile
● 100% avalanche tested
● Zener-protected
APPLICATIONS
● Switching applicationsDESCRIPTION
Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Product status link STD16N60M2 Product summary Order code STD16N60M2 Marking 16N60M2 Package DPAK Packing Tape and reel DS10725 - Rev 4 - May 2023 For further information contact your local STMicroelectronics sales office. 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage ID Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC= 100 °C IDM Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt Peak diode recovery voltage slope dv/dt MOSFET dv/dt ruggedness Tstg Storage temperature range Tj Operating junction temperature range 1.
