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STD16N60M2
Datasheet
N-channel 600 V, 280 mΩ typ., 12 A MDmesh M2 Power MOSFET in a DPAK package
TAB 23 1
DPAK D(2, TAB)
G(1)
S(3)
AM15572v1_tab
Features
Order code
VDS
RDS(on) max.
ID
STD16N60M2
600 V
320 mΩ
12 A
• Extremely low gate charge
•
Excellent output capacitance (COSS) profile
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.