Datasheet4U Logo Datasheet4U.com

STD16N60M2 - N-Channel Power MOSFET

General Description

This device is an N-channel Power MOSFET developed using MDmesh M2 technology.

Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

Key Features

  • Order code VDS RDS(on) max. ID STD16N60M2 600 V 320 mΩ 12 A.
  • Extremely low gate charge.
  • Excellent output capacitance (COSS) profile.
  • 100% avalanche tested.
  • Zener-protected.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STD16N60M2 Datasheet N-channel 600 V, 280 mΩ typ., 12 A MDmesh M2 Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) G(1) S(3) AM15572v1_tab Features Order code VDS RDS(on) max. ID STD16N60M2 600 V 320 mΩ 12 A • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected Applications • Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.