STMicroelectronics STD19N3LLH6AG
This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.| Part No. | STD19N3LLH6AG |
|---|---|
| Datasheet | STD19N3LLH6AG Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS STD19N3LLH6AG 30 V RDS(on) max. 33 mΩ ID PTOT 10 A 30 W● Designed for automotive applications and AEC-Q101 qualified
● Very low on-resistance
● Very low gate charge
● High avalanche ruggedness
● Low gate drive power loss
● Logic level
APPLICATIONS
● Switching applicationsDESCRIPTION
Order code STD19N3LLH6AG Table 1: Device summary Marking Package 19N3LLH6 DPAK Packing Tape and reel October 2015 DocID028432 Rev 2 This is information on a product in full production. 1/15 Contents Contents STD19N3LLH6AG 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves)...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information .......................................................................
