DESCRIPTION
It is also intended for any application with low gate charge drive requirements. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS
s HIGH-EFFICIENCY DC-DC CONVERTERS s UPS AND MOTOR CONTROL ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID (*) ID IDM (l) PTOT dv/dt (1) EAS (2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature Value 100 100 ± 20 25 21 100 100 0.67 13 480 –55 to 175 (1) I SD ≤35A, di/dt ≤300A/µs, VDD ≤ V (BR)DSS, Tj ≤ T JMAX. (2) Starting T j = 25°C, I D = 12.5A, VDD = 50V Unit V V V A A A W W/°C V/ns mJ °C (q) Pulse width limited by safe operating area (*) Current Limited by Package May 2002 1/9 STD25NF10 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance...
STMicroelectronics
