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STD25NF10L Datasheet PDF

STMicroelectronics STD25NF10L

This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications.
Part No. STD25NF10L
Datasheet STD25NF10L Download
Manufacturer
STMicroelectronics
Description N-CHANNEL MOSFET
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STD25NF10L datasheet page 1 preview

DESCRIPTION

It is also intended for any applications with low gate drive requirements INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

s HIGH-EFFICIENCY DC-DC CONVERTERS s UPS AND MOTOR CONTROL

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VDGR VGS ID(*) ID IDM(●) Ptot dv/dt (1) Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 100 100 ± 16 25 25 100 100 0.67 20 450 -55 to 175 Unit V V V A A A W W/°C V/ns mJ °C EAS (2) Tstg Tj (●) Pulse width limited by safe operating area. (*) Current Limited by Package February 2003 (1) ISD ≤25A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX (2) Starting T j = 25 oC, ID = 12.5A, VDD = 50V 1/9 STD25NF10L THERMAL DATA Rthj-case Rthj-pcb Tl Thermal Resistance...
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