STMicroelectronics STD30NF06
N-CHANNEL POWER MOSFET
| Part No. | STD30NF06 |
|---|---|
| Datasheet | STD30NF06 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. INTERNAL SCHEMATIC DIAGRAMAPPLICATIONS
s HIGH CURRENT, HIGH SWITCHING SPEED s MOTOR CONTROL , AUDIO AMPLIFIERS s SOLENOID AND RELAY DRIVERS s DC-DC & DC-AC CONVERTERSABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID ID VDGR m Parameter Value 60 60 ± 20 28 20 112 70 0.47 10 230 -55 to 175 Unit V V V A A A W W/°C V/ns mJ °C 4U (1) IDM(●) Ptot eet Sh ata dv/dt EAS (2) Tstg Tj (●) Pulse width limited by safe operating area. March 2002 . .co Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max.
