STD35P6LLF6 Datasheet | STMicroelectronics

P-channel 60 V, 0.025 Ω typ., 35 A STrip FET™ F6 Power MOSFET in a DPAK package - production data Figure 1: Internal schematic diagram D(2, TAB) G(1) Features Order code STD35P6LLF6 VDSS 60 V RDS(on) max. 0.028 Ω ID 35 A PTOT 70 W - Very low on-resistance - Very low gate charge - High avalanche ruggedness - Low gate drive power loss Applications - Switching applications Description This device is a P-channel Power MOSFET developed using the STrip FET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. S(3) Order code STD35P6LLF6 AM11258v1 Table 1: Device summary Marking Package 35P6LLF6 DPAK Packaging Tape and Reel April 2017 Doc ID025600 Rev 3 This is information on a product in full...