STMicroelectronics STD36P4LLF6
This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.| Part No. | STD36P4LLF6 |
|---|---|
| Datasheet | STD36P4LLF6 Download |
| Manufacturer |  STMicroelectronics |
| Description | P-Channel 40V 36A Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code STD36P4LLF6 VDS 40 V RDS(on) max. 0.0205 Ω ID 36 A PTOT 60 W Figure 1: Internal schematic diagram D(2, TAB) G(1)● Very low on-resistance
● Very low gate charge
● High avalanche ruggedness
● Low gate drive power loss
APPLICATIONS
● Switching applicationsDESCRIPTION
S(3) Order code STD36P4LLF6 AM11258v1 For the P-channel Power MOSFET, current polarity of voltages and current have to be reversed. Table 1: Device summary Marking Package 36P4LLF6 DPAK Packaging Tape and reel March 2015 DocID025616 Rev 2 This is information on a product in full production. 1/16 Contents Contents STD36P4LLF6 1 Electrical ratings ....
