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STD36P4LLF6 - P-CHANNEL POWER MOSFET

General Description

This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Key Features

  • Order code STD36P4LLF6 VDS 40 V RDS(on) max. 0.0205 Ω ID 36 A PTOT 60 W Figure 1: Internal schematic diagram D(2, TAB) G(1).
  • Very low on-resistance.
  • Very low gate charge.
  • High avalanche ruggedness.
  • Low gate drive power loss.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STD36P4LLF6 P-channel 40 V, 0.0175 Ω typ.,36 A, STripFET™ F6 Power MOSFET in a DPAK package Datasheet - production data Features Order code STD36P4LLF6 VDS 40 V RDS(on) max. 0.0205 Ω ID 36 A PTOT 60 W Figure 1: Internal schematic diagram D(2, TAB) G(1) • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. S(3) Order code STD36P4LLF6 AM11258v1 For the P-channel Power MOSFET, current polarity of voltages and current have to be reversed.