Datasheet Details
| Part number | STD3NB50 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 91.30 KB |
| Description | N-CHANNEL MOSFET |
| Download | STD3NB50 Download (PDF) |
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Overview: STD3NB50 N - CHANNEL 500V - 2.5Ω - 3A - IPAK/DPAK PowerMESH™ MOSFET PRELIMINARY DATA TYPE STD3NB50 www.DataSheet4U.com s s s s s V DSS 500 V R DS(on) < 2.8 Ω ID 3A TYPICAL RDS(on) = 2.
| Part number | STD3NB50 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 91.30 KB |
| Description | N-CHANNEL MOSFET |
| Download | STD3NB50 Download (PDF) |
|
|
|
Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
APPLICATIONS s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE IPAK TO-251 (Suffix "-1") INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID IDM ( • ) P tot dv/dt( 1 ) T stg Tj May 1998 Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max.
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