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STD40P3LLH6 - P-CHANNEL POWER MOSFET

General Description

This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Key Features

  • Order code STD40P3LLH6 VDS -30 V RDS(on) max 15 mΩ ID -40 A.
  • Very low on-resistance.
  • Very low gate charge.
  • High avalanche ruggedness.
  • Low gate drive power loss.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STD40P3LLH6 P-channel -30 V, 12 mΩ typ., -40 A STripFET™ H6 Power MOSFET in a DPAK package Datasheet - production data Figure 1: Internal schematic diagram D(2, TAB) G(1) Features Order code STD40P3LLH6 VDS -30 V RDS(on) max 15 mΩ ID -40 A  Very low on-resistance  Very low gate charge  High avalanche ruggedness  Low gate drive power loss Applications  Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. S(3) Order code STD40P3LLH6 AM11258v1 Table 1: Device summary Marking Package 40P3LLH6 DPAK Packing Tape and reel March 2016 DocID025821 Rev 4 This is information on a product in full production.