STD40P3LLH6 Datasheet | STMicroelectronics

P-channel -30 V, 12 mΩ typ., -40 A STripFET™ H6 Power MOSFET in a DPAK package - production data Figure 1: Internal schematic diagram D(2, TAB) G(1) Features Order code STD40P3LLH6 VDS -30 V RDS(on) max 15 mΩ ID -40 A - Very low on-resistance - Very low gate charge - High avalanche ruggedness - Low gate drive power loss Applications - Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. S(3) Order code STD40P3LLH6 AM11258v1 Table 1: Device summary Marking Package 40P3LLH6 DPAK Packing...