STMicroelectronics STD40P3LLH6
This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.| Part No. | STD40P3LLH6 |
|---|---|
| Datasheet | STD40P3LLH6 Download |
| Manufacturer |  STMicroelectronics |
| Description | P-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
FEATURES
Order code STD40P3LLH6 VDS -30 V RDS(on) max 15 mΩ ID -40 A● Very low on-resistance
● Very low gate charge
● High avalanche ruggedness
● Low gate drive power loss
APPLICATIONS
● Switching applicationsDESCRIPTION
S(3) Order code STD40P3LLH6 AM11258v1 Table 1: Device summary Marking Package 40P3LLH6 DPAK Packing Tape and reel March 2016 DocID025821 Rev 4 This is information on a product in full production. 1/16 Contents Contents STD40P3LLH6 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ......
