STMicroelectronics STD40P8F6AG
This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.| Part No. | STD40P8F6AG |
|---|---|
| Datasheet | STD40P8F6AG Download |
| Manufacturer |  STMicroelectronics |
| Description | Automotive-grade P-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code STD40P8F6AG VDSS -80 V RDS(on) max. 28 mΩ ID -40 A● Designed for automotive applications and AEC-Q101 qualified
● Very low on-resistance
● Very low gate charge
● High avalanche ruggedness
● Low gate drive power loss
APPLICATIONS
● Switching applicationsDESCRIPTION
S(3) Order code STD40P8F6AG AM11258v1 Table 1: Device summary Marking Package 40P8F6 DPAK Packing Tape and reel July 2016 DocID029583 Rev 1 This is information on a product in full production. 1/16 Contents Contents STD40P8F6AG 1 Electrical ratings ..................................
