STMicroelectronics STD4LN80K5
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on resistance and ultra low gate charge for application requiring superior power density and high efficiency.STD4LN80K5 Specifications
- Package : DPAK
- RDS(on) Max : 2.6Ω
- Drain-Source Voltage : 800V
- Terminals : 2
- Max Power Dissipation : 60W
- Max Operating Temp : 150°C
- Min Operating Temp : -55°C
Source:
Octopart
| Part No. | STD4LN80K5 |
|---|---|
| Datasheet | STD4LN80K5 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code STD4LN80K5 VDS 800 V RDS(on) max. 2.6 Ω ID 3A● Industry’s lowest RDS(on) x area
● Industry’s best figure of merit (FoM)
● Ultra low gate charge
● 100% avalanche tested
● Zener-protected
APPLICATIONS
● Switching applicationsDESCRIPTION
Order code STD4LN80K5 Table 1: Device summary Marking Package 4LN80K5 DPAK Packing Tape and reel May 2016 DocID027848 Rev 2 This is information on a product in full production. 1/15 Contents Contents STD4LN80K5 1 Electrical ratings ............
