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STD4NK50ZT4 - N-CHANNEL Power MOSFET

Download the STD4NK50ZT4 datasheet PDF. This datasheet also covers the STD4NK50Z-1 variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™.

Key Features

  • Order codes VDS RDS(on) max. STD4NK50Z-1 STD4NK50ZT4 500 V 2.7 Ω.
  • Extremely high dv/dt capability.
  • 100% avalanche tested.
  • Gate charge minimized.
  • Very low intrinsic capacitance.
  • Zener-protected PTOT 45 W Package IPAK DPAK G(1).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STD4NK50Z-1-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STD4NK50Z-1, STD4NK50ZT4 Datasheet N-channel 500 V, 2.2 Ω typ., 3 A SuperMESH™ Power MOSFETs in IPAK and DPAK packages TAB IPAK 3 12 D(2, TAB) TAB 23 1 DPAK Features Order codes VDS RDS(on) max. STD4NK50Z-1 STD4NK50ZT4 500 V 2.7 Ω • Extremely high dv/dt capability • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected PTOT 45 W Package IPAK DPAK G(1) Applications • Switching applications S(3) AM01475V1 Product status link STD4NK50Z-1 STD4NK50ZT4 Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™.