STD6N52K3 - N-CHANNEL POWER MOSFET

STMicroelectronics

General Description

This MDmesh™ K3 Power MOSFET is the result of improvements applied to STMicroelectronics’ MDmesh™ technology, combined with a new optimized vertical structure.

Key Features

Order codes VDS RDS(on) max. STD6N52K3 525 V 1.2 Ω.
100% avalanche tested.
Extremely high dv/dt capability.
Very low intrinsic capacitance.
Improved diode reverse recovery characteristics.
Zener-protected ID 5A PTOT 70 W.

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STD6N52K3 n-channel power mosfet by STMicroelectronics - Datasheet Preview

Datasheet Details

Part number	STD6N52K3
Manufacturer	STMicroelectronics
File Size	418.19 KB
Description	N-CHANNEL POWER MOSFET
Datasheet	STD6N52K3 Datasheet

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STD6N52K3 Datasheet N-channel 525 V, 1 Ω typ., 6.5 A MDmesh™ K3 Power MOSFET in DPAK package TAB 23 1 DPAK D(2, TAB) G(1) S(3) AM01475V1 Features Order codes VDS RDS(on) max. STD6N52K3 525 V 1.2 Ω • 100% avalanche tested • Extremely high dv/dt capability • Very low intrinsic capacitance • Improved diode reverse recovery characteristics • Zener-protected ID 5A PTOT 70 W Applications • Switching applications Description This MDmesh™ K3 Power MOSFET is the result of improvements applied to STMicroelectronics’ MDmesh™ technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications.