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STD6N52K3
Datasheet
N-channel 525 V, 1 Ω typ., 6.5 A MDmesh™ K3 Power MOSFET in DPAK package
TAB 23 1
DPAK
D(2, TAB)
G(1)
S(3)
AM01475V1
Features
Order codes
VDS
RDS(on) max.
STD6N52K3
525 V
1.2 Ω
• 100% avalanche tested • Extremely high dv/dt capability • Very low intrinsic capacitance • Improved diode reverse recovery characteristics • Zener-protected
ID 5A
PTOT 70 W
Applications
• Switching applications
Description
This MDmesh™ K3 Power MOSFET is the result of improvements applied to STMicroelectronics’ MDmesh™ technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications.