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STD6N62K3 - N-channel Power MOSFET

Datasheet Summary

Description

This MDmesh K3 Power MOSFET is the result of improvements applied to STMicroelectronics’ MDmesh technology, combined with a new optimized vertical structure.

Features

  • Order codes VDS RDS(on) max. STD6N62K3 620 V 1.2 Ω.
  • 100% avalanche tested.
  • Extremely high dv/dt capability.
  • Very low intrinsic capacitance.
  • Improved diode reverse recovery characteristics.
  • Zener-protected ID 5.5 A PTOT 90 W.

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Datasheet preview – STD6N62K3

Datasheet Details

Part number STD6N62K3
Manufacturer STMicroelectronics
File Size 509.55 KB
Description N-channel Power MOSFET
Datasheet download datasheet STD6N62K3 Datasheet
Additional preview pages of the STD6N62K3 datasheet.

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Full PDF Text Transcription

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STD6N62K3 Datasheet N-channel 620 V, 950 mΩ typ., 5.5 A MDmesh K3 Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) G(1) S(3) Features Order codes VDS RDS(on) max. STD6N62K3 620 V 1.2 Ω • 100% avalanche tested • Extremely high dv/dt capability • Very low intrinsic capacitance • Improved diode reverse recovery characteristics • Zener-protected ID 5.5 A PTOT 90 W Applications • Switching applications AM01476v1_tab Description This MDmesh K3 Power MOSFET is the result of improvements applied to STMicroelectronics’ MDmesh technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications.
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