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STD6N65M2 - N-channel Power MOSFET

General Description

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology.

Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.

Key Features

  • TAB 3 1 D2 PAK TAB 3 1 DPAK Figure 1. Internal schematic diagram , TAB Order codes STB6N65M2 STD6N65M2 VDS RDS(on) max 650 V 1.35 Ω ID 4A.
  • Extremely low gate charge.
  • Excellent output capacitance (COSS) profile.
  • 100% avalanche tested.
  • Zener-protected.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB6N65M2, STD6N65M2 N-channel 650 V, 1.2 Ω typ., 4 A MDmesh™ M2 Power MOSFETs in D2PAK and DPAK packages Datasheet - preliminary data Features TAB 3 1 D2 PAK TAB 3 1 DPAK Figure 1. Internal schematic diagram , TAB Order codes STB6N65M2 STD6N65M2 VDS RDS(on) max 650 V 1.35 Ω ID 4A • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected Applications • Switching applications Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.