Datasheet Summary
N-channel 800 V, 0.8 Ω typ., 6 A MDmesh K5 Power MOSFET in a DPAK package
TAB 23 1
DPAK D(2, TAB)
G(1)
S(3)
Features
Order code
RDS(on) max.
800 V
0.95 Ω
6A
- Industry’s lowest RDS(on) x area
- Industry’s best FoM (figure of merit)
- Ultra-low gate charge
- 100% avalanche tested
- Zener-protected
PTOT 110 W
Applications
- Switching applications
AM01476v1_tab
Description
This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density...