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STD9HN65M2 - N-channel Power MOSFET

General Description

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology.

Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

Key Features

  • Order code STD9HN65M2 VDS 600 V RDS(on) max. 0.82 Ω ID 5.5 A.
  • Extremely low gate charge.
  • Excellent output capacitance (COSS) profile.
  • 100% avalanche tested.
  • Zener-protected.

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Full PDF Text Transcription for STD9HN65M2 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for STD9HN65M2. For precise diagrams, and layout, please refer to the original PDF.

STD9HN65M2 N-channel 600 V, 0.71 Ω typ., 5.5 A MDmesh™ M2 Power MOSFET in a DPAK package Datasheet - production data Figure 1: Internal schematic diagram D(2, TAB) G(1) F...

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production data Figure 1: Internal schematic diagram D(2, TAB) G(1) Features Order code STD9HN65M2 VDS 600 V RDS(on) max. 0.82 Ω ID 5.5 A • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected Applications • Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

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