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STD9N80K5 - N-channel Power MOSFET

General Description

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure.

The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Key Features

  • Order code VDS RDS(on)max. ID STD9N80K5 800 V 900 mΩ 7A.
  • Industry’s lowest RDS(on) x area.
  • Industry’s best figure of merit (FoM).
  • Ultra-low gate charge.
  • 100% avalanche tested.
  • Zener-protected PTOT 110 W.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STD9N80K5 Datasheet N-channel 800 V, 730 mΩ typ., 7 A MDmesh K5 Power MOSFET in a DPAK package TAB 23 1 DPAK D (2 , TAB) G( 1) S(3) AM15572V1 Features Order code VDS RDS(on)max. ID STD9N80K5 800 V 900 mΩ 7A • Industry’s lowest RDS(on) x area • Industry’s best figure of merit (FoM) • Ultra-low gate charge • 100% avalanche tested • Zener-protected PTOT 110 W Applications • Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.