STMicroelectronics STDRIVEG610
The STDRIVEG610 is a high-voltage half-bridge gate driver for N‑channel Enhancement Mode GaN. The high-side driver section is designed to stand a voltage rail up to 600 V and can be easily supplied by the integrated bootstrap diode. The STDRIVEG610 features supply UVLOs tailored to fast startup and lowconsumption soft-switching applications, but with full hard switching support and interlocking to avoid cross-conduction conditions.| Part No. | STDRIVEG610 |
|---|---|
| Datasheet | STDRIVEG610 Download |
| Manufacturer |  STMicroelectronics |
| Description | High voltage and high-speed half-bridge gate driver |
| Buy | Stock & Price |
FEATURES
● High voltage rail up to 600 V● dV/dt transient immunity ±200 V/ns
● Driver with separated sink and source path for optimal driving: – 2.4 A and 1.2 Ω sink – 1.0 A and 3.7 Ω source
● High-side and low-side linear regulators for 6 V gate driving voltage
● Ultra fast high-side startup time: 300 ns
● 45 ns propagation delay, 15 ns minimum output pulse
● High switching frequency (> 1 MHz)
● Embedded 600 V bootstrap diode
● Full support of GaN hard-switching operation
● UVLO function on VCC, VBO, and VLS
● Separated logic inputs and shutdown pin
● Fault pin for overtemperature and UVLO reporting
● Stand-by function for low consumption mode
● Separated PGND for Kelvin source driving and current shunt compatibility
● 3.3 V to 20 V compatible inputs with hysteresis and pull-down
APPLICATIONS
● DC/DC and resonant converters (LLC, active clamp flyback, totem pole, ...)● PFC and synchronous rectifier topologies
● Battery charger and adapters
● AC/DC converters
DESCRIPTION
High current capability, short propagation delay with excellent delay matching, and integrated LDOs make the STDRIVEG610 optimized for driving high-speed GaN.
