STMicroelectronics STDRIVEG612
the STDRIVEG612 is a 600 V high-speed half-bridge gate driver optimized for 5 V driving enhanced-mode GaN HEMTs. The high-side driver section is designed to support a voltage rail up to 600 V and can easily be supplied by the integrated bootstrap diode. The STDRIVEG612 features supply UVLOs tailored to hard-switching applications, interlocking to avoid cross-conduction conditions and an overcurrent comparator with SmartSD.| Part No. | STDRIVEG612 |
|---|---|
| Datasheet | STDRIVEG612 Download |
| Manufacturer |  STMicroelectronics |
| Description | High voltage and high-speed half-bridge gate driver |
| Buy | Stock & Price |
FEATURES
● High voltage rail up to 600 V● dV/dt transient immunity ±200 V/ns
● Driver with separated sink and source path for optimal driving: – 1.8 A and 1.2 Ω sink – 0.8 A and 4.0 Ω source
● High-side and low-side linear regulators for 5 V gate driving voltage
● Fast high-side startup time: 5 µs
● 50 ns propagation delay, 15 ns minimum output pulse
● High switching frequency (> 1 MHz)
● Embedded bootstrap diode
● Full support of GaN hard-switching operation
● Comparator for overcurrent detection with Smart Shutdown
● UVLO function on VCC, VHS, and VLS
● Separated logic inputs and shutdown pin
● Fault pin for overcurrent, overtemperature and UVLO reporting
● Stand-by function for low consumption mode
● Separated PGND for Kelvin source driving and current shunt compatibility
● 3.3 V to 20 V compatible inputs with hysteresis and pull-down
APPLICATIONS
● AC/DC, DC/DC, and resonant converters, PFC, synchronous rectifiers, battery charger and adapters● Motor driver for home appliances, p...
