STMicroelectronics STDRIVEG611
The STDRIVEG611 is a high-voltage half-bridge gate driver for N‑channel Enhancement Mode GaN. The high-side driver section is designed to stand a voltage rail up to 600 V and can be easily supplied by the integrated bootstrap diode. The STDRIVEG611 features supply UVLOs tailored to hard switching applications, interlocking to avoid cross-conduction conditions and an overcurrent comparator with SmartSD.FEATURES
● High voltage rail up to 600 V● dV/dt transient immunity ±200 V/ns
● Driver with separated sink and source path for optimal driving: – 2.4 A and 1.2 Ω sink – 1.0 A and 3.7 Ω source
● High-side and low-side linear regulators for 6 V gate driving voltage
● Fast high-side startup time: 5 µs
● 45 ns propagation delay, 15 ns minimum output pulse
● High switching frequency (> 1 MHz)
● Embedded 600 V bootstrap diode
● Full support of GaN hard-switching operation
● Comparator for overcurrent detection with Smart Shutdown
● UVLO function on VCC, VHS, and VLS
● Separated logic inputs and shutdown pin
● Fault pin for overcurrent, overtemperature and UVLO reporting
● Stand-by function for low consumption mode
● Separated PGND for Kelvin source driving and current shunt compatibility
● 3.3 V to 20 V compatible inputs with hysteresis and pull-down
APPLICATIONS
● Motor driver for home appliances, pumps, and compressors● Factory automation, servo, and industrial drives
● E-bikes and power...