STMicroelectronics STF12N120K5
The result is a AM01476v1_tab dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.| Part No. | STF12N120K5 |
|---|---|
| Datasheet | STF12N120K5 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-Channel 1200V 12A Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS RDS(on) max. ID 3 2 1 TO-220FP 1 3 2 1 TO-3PF STF12N120K5 STFW12N120K5 1200 V● Very low FoM (figure of merit)
● Ultra-low gate charge 690 mΩ 12 A
● 100% avalanche tested
● Zener-protected D(2, TAB)
APPLICATIONS
● Switching applications G(1)DESCRIPTION
These very high voltage N-channel Power MOSFETs are designed using MDmesh S(3) K5 technology based on an innovative proprietary vertical structure. Product status links STF12N120K5 STFW12N120K5 Product summary Order code STF12N120K5 Marking 12N120K5 Package TO-220FP Packing Tube Order code STFW12N120K5 Marking 12N120K5 Package TO-3PF Packing Tube DS10355 - Rev 3 - September 2025 For further information, contact your local STMicroelectronics sales office. STF12N120K5, STFW12N120K5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drai...
