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STF12N120K5 - N-CHANNEL POWER MOSFET

General Description

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.

The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Key Features

  •    TO-220FP  TO-3PF    Order code VDS RDS(on) max. ID PTOT STF12N120K5 1200 V STFW12N120K5 0.69 Ω 40 W 12 A 63 W.
  • Industry’s lowest RDS(on) x area.
  • Industry’s best figure of merit (FoM).
  • Ultra low gate charge.
  • 100% avalanche tested.
  • Zener-protected Figure 1. Internal schematic diagram '  .
  •  6  $0Y.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STF12N120K5, STFW12N120K5 N-channel 1200 V, 0.62 Ω typ., 12 A MDmesh™ K5 Power MOSFETs in TO-220FP and TO-3PF packages Datasheet - production data Features    TO-220FP  TO-3PF    Order code VDS RDS(on) max. ID PTOT STF12N120K5 1200 V STFW12N120K5 0.69 Ω 40 W 12 A 63 W • Industry’s lowest RDS(on) x area • Industry’s best figure of merit (FoM) • Ultra low gate charge • 100% avalanche tested • Zener-protected Figure 1. Internal schematic diagram '  *  6  $0Y Applications • Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.