Datasheet Summary
N-channel 500 V, 0.325 Ω typ.,10 A MDmesh II Plus™ low Qg Power MOSFET in a TO-220FP package
- preliminary data
Features
3 2 1
TO-220FP
Order code STF12N50M2
VDS 500 V
RDS(on) max ID
0.38 Ω
10 A
- Extremely low gate charge
- Lower RDS(on) x area vs previous generation
- Low gate input resistance
- 100% avalanche tested
- Zener-protected
Figure 1. Internal schematic diagram
Applications
- Switching applications
Description
This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET associates a vertical structure to the pany's strip layout to yield one of the...