STF4LN80K5 Datasheet | STMicroelectronics

N-channel 800 V, 2.1 Ω typ., 3 A MDmesh™ K5 Power MOSFET in a TO-220FP package - production data TO-220FP Figure 1: Internal schematic diagram Features Order code STF4LN80K5 VDS 800 V RDS(on) max. 2.6 Ω ID 3A - Industry’s lowest RDS(on) - area - Industry’s best FoM (figure of merit) - Ultra low-gate charge - 100% avalanche tested - Zener-protected Applications - Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density...