STF4N150 Description
Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performances. The strengthened layout coupled with the pany’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics. Internal Schematic Diagram APPLICATIONS s SWITCH MODE POWER SUPPLIES Table.