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STF4N90K5 - N-channel Power MOSFET

General Description

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.

The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Key Features

  • Order code STF4N90K5 VDS 900 V RDS(on) max. 2.10 Ω ID 4A.
  • Industry’s lowest RDS(on) x area.
  • Industry’s best FoM (figure of merit).
  • Ultra-low gate charge.
  • 100% avalanche tested.
  • Zener-protected.

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Full PDF Text Transcription for STF4N90K5 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for STF4N90K5. For precise diagrams, and layout, please refer to the original PDF.

STF4N90K5 N-channel 900 V, 1.90 Ω typ., 4 A MDmesh™ K5 Power MOSFET in a TO-220FP package Datasheet - production data TO-220FP Figure 1: Internal schematic diagram D(2) G...

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- production data TO-220FP Figure 1: Internal schematic diagram D(2) G(1) Features Order code STF4N90K5 VDS 900 V RDS(on) max. 2.10 Ω ID 4A  Industry’s lowest RDS(on) x area  Industry’s best FoM (figure of merit)  Ultra-low gate charge  100% avalanche tested  Zener-protected Applications  Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

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