STF4N90K5 Datasheet | STMicroelectronics

N-channel 900 V, 1.90 Ω typ., 4 A MDmesh™ K5 Power MOSFET in a TO-220FP package - production data TO-220FP Figure 1: Internal schematic diagram D(2) G(1) Features Order code STF4N90K5 VDS 900 V RDS(on) max. 2.10 Ω ID 4A - Industry’s lowest RDS(on) x area - Industry’s best FoM (figure of merit) - Ultra-low gate charge - 100% avalanche tested - Zener-protected Applications - Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power...